Abstract
Amorphous indium-gallium-zinc-oxide (a-IGZO) thin films on glass were prepared using facing target sputtering (FTS) methods by different oxygen flow rates at room temperature. The a-IGZO films were used as a channel layer for thin film transistors (TFTs). The electrical, optical, and structural properties of a-IGZO thin films were measured by Hall Effect measurement, UV/VIS spectrometer and X-ray diffractometer. The performance and device characteristics of the a-IGZO TFTs were measured by semiconductor parameter analyzer. The transfer characteristics of a-IGZO TFTs saturation exhibited mobility of 19.42 cm2/V.s and the threshold voltage of 4.18 V.
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