Abstract
AlN thin films doped with Cr (AlN:Cr) were prepared on p-Si(100) substrates by pulsed laser deposition. Al–AlN:Cr-Si MIS structures were formed and their current–voltage and 1 MHz admittance characteristics were measured and analyzed. The current through the MIS structure is proportional to the square of the applied voltage, which is evidence that the current is limited by space charge at traps in the AlN:Cr films. These traps are responsible also for the observed negative differential resistance and hysteresis of the current-voltage characteristics. The C-V and G-V characteristics measured at 1 MHz and the impedance measurements in 500 Hz–500 kHz frequency range without applying bias voltage are also influenced by the traps in the AlN:Cr films.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
