Abstract
Thin films of AlN doped with Cr were formed on p-Si(100) substrates by pulsed laser deposition. Al-AlN:Cr-Si MIS structures were formed and their current-voltage and 1 MHz admittance characteristics were measured. The considerably smaller increase of the conductance at 300 K in comparison to that measured at 77 K is an evidence for tunneling type of conductance in these MIS structures. The current is limited by space charge at deep levels (traps) in these AlN:Cr films which determines the mechanism of the charge transport through the MIS structures. The density of the filled electron traps is in the order of 1016 cm−3.
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