Abstract
Zirconium oxynitride thin film thermistors possess many desirable attributes in a temperature sensor including high sensitivity, excellent long-term stability due to its excellent physical, chemical and mechanical properties. In order to predict and optimize the zirconium oxynitride thin film ultimate performance, temperature sensitivity and electronic properties of zirconium oxynitride thin films deposited by reactive magnetron sputtering process with various flow rates of reactive gases (N2 + O2) have been studied. The results revealed that flow rates of reactive gases have great influence on the temperature coefficient of electrical resistivity (TCR) of zirconium oxynitride thin film. With the flow rates of reactive gases increasing, TCR of zirconium oxynitride thin film increase firstly and then decreased, in which reaches a maximum value at 8 sccm. In addition, impedance spectroscopy was employed to analyze the contributions of grain boundary and grain to the conduction mechanism.
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