Abstract
A detailed study of phonon properties of SbxGe1-xSe (x = 0.00 and 0.15) crystals is demonstrated here. DVT technique was employed for crystal growth. Powder XRD confirmed the phase-singularity and revealed the structural minutiae of the grown materials. The surface morphology of the crystals was studied under a high-resolution microscope. Room temperature Raman spectroscopy revealed a blue shift in the out-of-plane mode (B3g) and in-plane modes (Ag(1) and Ag(2)) of GeSe with Sb mixing. Further, the temperature-dependent Raman spectroscopy showed a monotonous red-shift and softening of modes as the temperature increases from 103 K to 298 K. The first order temperature coefficients for peaks B3g and Ag(2) are calculated. Shifting of modes pertaining to laser-power is also recorded for room temperature, and thermal conductivity of the crystals is determined. A strong anisotropy is found in the thermal conductivity for out-of-plane and in-plane modes for both crystals.
Published Version
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