Abstract
In the present work, explosive thermal evaporation was used to form n-InSb films on i-GaAs (100) substrates. The investigation results of crystal state, microstructure, phase and element composition, and electrical properties of n-InSb films deposited at the substrate temperature of 410-480°C are presented. It is shown that heteroepitaxial n-InSb films form in the deposition temperature of 410°C. At a substrate temperature of 430-440°C, the surface is inhomogeneous; precipitates oriented differently in the substrate plane are clearly observed. At a substrate temperature of 480°C, the phase composition of the film is a superposition of InSb and In phases, and the SEM image of the sample shows that the film is island-like. The resulting n-InSb films at a deposition temperature of 430°C have the highest temperature coefficient of resistance (-1.25 ± 0.02) %·deg-1. Temperature sensors based on n-InSb-i-GaAs show performance in a wide temperature range (-80°C to +150°C) and at liquid nitrogen temperature and can be used in the space industry and low-temperature electronics, as well as in the automotive and aircraft industries.
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