Abstract
Intermixing in a Si/Ti/Si tri-layer induced by 120 MeV Au ions has been studied. X-raystanding wave analysis combined with x-ray reflectivity has been used to get a depth profileof the Ti marker layer with an accuracy of a fraction of a nanometer. Two differentthicknesses of the Ti marker layer have been used to study the possible effect of layerthickness on intermixing. In the case of a 2 nm thick Ti layer intermixing is stronger ascompared to a 6 nm Ti film, which can be understood in terms of a stronger confinementof the dissipated energy in the Ti layer due to increased interface scattering ofδ-electrons in the case of the 2 nm thick Ti layer. In the 6 nm thick Ti layer, intermixing isasymmetric at the two interfaces, which may be due to a possible asymmetry in theinterface structure in the as-deposited film itself.
Published Version
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