Abstract
A near-surface quantum well (QW) structure has been used as an effective probe of surface states before and after different hydrogen treatments. By correlating the surface composition with the luminescence efficiency of the near-surface QW, we find that the surface passivation is dominated by the defect density of the interface between the AlGaAs surface barrier and the overlying oxide. A complete recovery or further enhancement of luminescence can be readily achieved by treatments using hydrogen ions. However, atomic hydrogen at low exposures is not capable of modifying that interface, and is not effective in passivation. These results corroborate a passivation mechanism which involves removal of As from the interface between the AlGaAs surface barrier and the overlying oxide, and the reduction of interface state density.
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