Abstract
The comparative research of production and loss of atoms (F, H) and radicals (CF2), important for plasma processing, is carried out in DF CCP plasma in Ar/CF4 and Ar/CHF3 mixtures modeling two etching plasmas (fluorine-rich) and (fluorine-poor) respectively. Electron density, electron temperature and ion energy spectra are measured for single and dual frequency discharge modes. Spatial profiles of radical and atom densities are measured in both mixtures by using spatially resolved actinometry and UV absorption techniques. The opportunity for plasma-surface interaction control using spatial radical and atom density distributions is shown. The influence of high and low frequency powers on balance between surface and volume processes is discussed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
