Abstract
Thin film deposition of SnS2 was done by spin coating technique at ambient temperature. Deposition was done for different spin speed and spin time. The film thickness dependence on spin speed and spin time was studied. The spin speed was varied from 1000 rpm to 2000 rpm and spin time from 2 s to 6 s for constant speed of 1000 rpm. The elemental composition and crystal structure along with the phase of the as-deposited thin film was determined by the energy dispersive analysis of x-ray (EDAX) and x-ray diffraction (XRD) techniques respectively. The as-deposited thin film was found to be near stoichiometric and possess hexagonal crystal structure with determined lattice parameters in good agreement with the reported values. The crystallite size calculated from the XRD data using Scherrer’s formula and Hall–Williamson relation came out to be 9.77 nm and 6.49 nm, respectively. The transmission electron microscopy (TEM) study of spin deposited thin films showed the film to be continuous. Surface study of the as-deposited thin film was done by simple optical microscope and scanning electron microscope (SEM). The study showed that the deposited thin film to be flat and uniform without visible cracks and pores. The optical spectroscopy study of the as-deposited thin film showed that the optical bandgap value decreases with increase in film thickness. The d.c. electrical resistivity variation with temperature for spin coating as-deposited SnS2 film showed that the resistivity decreases with increase in temperature corroborating the semiconducting nature. The resistivity variation plot possesses two slopes. The temperature ranges showing two slopes lay between 300 to 383 K and 384 to 423 K having activation energy values for the two temperature ranges as 0.072 eV and 0.633 eV, respectively. The achieved results are deliberated in details.
Published Version
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