Abstract
Computer simulation study of Si/Si0.5Ge0.5 heterostructure Double Avalanche Region (DAR) IMPact Avalanche Transit Time (IMPATT) diodes has been carried out using some computer simulation programs developed by us. The results show that by incorporating a 60 nm of SiGe layer on the n-side avalanche zone of the DAR diode, significant improvement in the mm-wave properties as well as noise measure of the diode is achieved. A noise measure of 7.8 dB at 94 GHz from this Si/SiGe DAR diode is note worthy
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