Study of SiOx Thickness Effects on Aluminum-induced Crystallization

Abstract

The aluminum-induced crystallization (AIC) used SiOx was studied layer as an intermediate layer of aluminum and silicon. SiOx layer thickness was varied from 2 nm to 20 nm, and affected crystallization process of the AIC. In the case of thin SiOx layer, crystallized silicon morphology showed kinetic-limited aggregation. On the other hand, crystallized silicon processed with thick SiOx layer showed diffusion-limited aggregation due to slow silicon diffusion velocity. The kinetic-limited aggregation showed large grain. The crystallized silicon grain size relatively increased at kinetic-limited aggregation. The schematic crystallization model was used to describe a relationship between crystallization and grain size in this paper.