Abstract
The thickness effects of SiOx which was deposited as an intermediate layer between aluminum and silicon were studied on Aluminum-induced crystallization (AIC). The SiOx layer thickness varied from 2 nm to 20 nm and affected the crystallization process of the AIC. In the case of the thin SiOx layer, crystallized silicon morphology showed kinetic-limited aggregation. On the other hand, crystallized silicon processed with the thick SiOx layer showed diffusion-limited aggregation due to slow silicon diffusion velocity. Kinetic-limited aggregation showed large grain. The schematic crystallization model was used to describe the relationship between crystallization and grain size in this paper.
Highlights
Solar cell manufacturing costs need to be reduced to achieve grid parity
Aluminum-induced crystallization (AIC) is used to make large silicon grain sizes as a seed layer process in the crystalline silicon thin-film solar cell since the crystallized silicon produced by the aluminum-induced crystallization (AIC) has large silicon grain size and high doping concentration properties efficiency.[8,9]
In the case of silicon/native aluminum oxide/aluminum sample, the layer sequence is changed to aluminum/native aluminum oxide/crystallized silicon after the annealing process
Summary
The native aluminum oxide layer is an important layer since the aluminum oxide layer acts as a silicon diffusion path during the annealing process.[16] In our previous research works about an AIC process, in particular, an conventional AIC using an SiOx layer, was introduced as a silicon diffusion path instead of the native aluminum oxide layer.[19]. The crystallized Si layer formed by the AIC showed high-quality crystalline Si. In this paper, SiOx thickness effects were analyzed. The layers were changed to aluminum/SiOx/crystallized silicon/SiOx/SiNx/SiOx/ Graphite
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