Abstract
We have developed a new scheme for SiO 2 -film preparation in which tetraethoxyorthosilicate (TEOS: Si(OC 2 H 5 ) 4 ) is photo-dissociated by vacuum ultraviolet Xe 2 excimer radiation (A = 172 nm). The SiO 2 -films can be deposited at room temperature include a considerable amount of C and H atoms and/or molecules. They show relative-dielectric constants and leakage currents as low as the films prepared with ozone-assisted CVD. We have tried to avoid impurity inclusion by adding O 2 or N 2 O to the raw material TEOS. The addition of O 2 results in decrease of C-H inclusion. We have evaluated the electrical properties and gap-filling characteristics by adding the gas. The SiO 2 -films prepared with the photo-CVD could be useful for a multi-layer-inter-connection technologies of CMP-less and free environmental disruption at ULSI devices processing.
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