Study of single-layer stacking faults in 4H–SiC by deep level transient spectroscopy

Abstract

The electronic properties of single-layer Shockley-type stacking faults (SSFs) in 4H–SiC have been studied by deep level transient spectroscopy (DLTS) in the temperature range from 80 to 300 K. SSFs are introduced by low energy electron beam irradiation at room temperature using intentionally made scratches as nucleation sites. A DLTS peak was detected after SSF nucleation and expansion, the amplitude of which decreases after SSF shrinking. For the SSF energy level, a value of 0.213 ± 0.005 eV below the conduction band minimum is obtained, which well correlates with theoretical predictions.