Abstract
Silicon nitride (SiN x ) films deposited by direct plasma-enhanced chemical vapor deposition (PECVD) are widely used in silicon solar cell fabrication as passivation layers, yielding very low surface recombination velocities on crystalline Si (c-Si) material. So far, there have been some reports on deep-level transient spectroscopy (DLTS) of as-deposited SiN x layers on Si, but the impact of rapid thermal anneal (RTA) processing step and the textured surface has not been investigated yet. In this paper, low frequency direct PECVD Si-SiN x interface properties with and without plasma NH 3 pre-treatment, with and without RTA on both flat (100) and (111) orientations and textured n-type silicon samples have been investigated with DLTS.
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