Abstract
This work presents a study of Metal-Oxide-Semiconductor RRAM structures with highly doped Si substrates that exhibit the resistive switching effect. We use DC measurements to show the resistance modulation effect and small-signal measurements to investigate the resistive switching layer behavior. We show that by utilizing the results of impedance spectroscopy measurements, we can build an equivalent electrical circuit that can be used to investigate the properties of RRAM devices. Our model fits very well with the measurement data for investigated frequency and voltage values.
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