Abstract
In order to increase the resistive switching performance of Gd2O3 based memory devices, it was desirable to find the impact of multi-factors including thickness, deposition temperature and doping method on RRAM devices. In the present paper, we reported that decreasing the thickness of Gd2O3 film can increase the endurance of RRAM devices and high temperature deposited Gd2O3 based devices showed better uniformity as well as endurance. The reason of improvement for high temperature deposited devices was due to larger O defects content in Gd2O3 film compared with room temperature deposited Gd2O3 film. Moreover, the combination of thin and high temperature deposited Gd2O3 film can further improve the properties of RRAM devices while doping method integrating thickness and deposition temperature performed no advantages in properties compared with undoped devices. The study in this paper clarified the multi-factors induced effect of Gd2O3 film on resistive switching process, which may be applied in RRAM devices area.
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