Abstract
A superconducting field-effect transistor with a 0.1- mu m length gate electrode was fabricated, and its performance was studied by tunneling spectroscopy. Two superconducting electrodes (source and drain) were formed by a self-aligned fabrication process. Superconducting current flowing through the semiconductor (Si) between the two superconducting electrodes (Nb) was found to be controlled by applying a gate-bias voltage. The reflection of carriers at the boundary between p-type Si-single crystal and NbN film was studied by measuring the electrical resistance of a p-Si-coupled junction with coplanar structure. The results elucidate the boundary condition in the superconductor-semiconductor proximity system. >
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