Study of SiC Epitaxial Growth Using Tetrafluorosilane and Dichlorosilane in Vertical Hotwall CVD Furnace

Abstract

This paper presents one of the first comparative studies of distinctive results obtained using halogenated silicon precursors, dichlorosilane (SiH2Cl2, DCS) and tetrafluorosilane (SiF4, TFS) for SiC homo epitaxial growth. Both TFS and DCS possess very distinct properties that show specific influence on SiC growth. SiC epitaxial growth using TFS greatly suppresses parasitic deposition in the gas delivery system. Growth using TFS shows carbon mediated growth regime, and exhibits controlled doping concentration of the epilayer by an order of magnitude lower than that in the growth using DCS at the same C/Si ratio. Studies of epilayer surface morphology show that the epilayers from TFS growth have a specular surface in a wide C/Si range whereas in the growth using DCS, the epilayer surface roughness is strongly dependent on the C/Si ratio.