Abstract
The frequency and time dependence of capacitance of dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT)-based metal-insulator-semiconductor (MIS) capacitors were studied. The frequency spectra show a long and gradual slope over many orders of magnitude in frequency, and the time evolution in the subthreshold region exhibits a logarithmic dependence. These two phenomena are analyzed from a unified point of view on the basis of charge trapping models that were originally developed for Si-based MIS capacitors. The charge trapping model with a Gaussian-distributed surface potential in DNTT successfully reproduces both the frequency and time dependences with the same parameter set.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
