Abstract
This paper reports on the study and development of post plasma doping photoresist (PR) strip processes which meet the requirements of good dopant retention and cleaning capability for this application. SIMS analysis of plasma implanted silicon wafers processed with these plasma strip approaches have shown improved dopant retention and profile in both n-type and p-type junctions. Stripping of implanted patterned PR wafers with these processes has revealed excellent cleaning and residue removal capability. This work demonstrates that these post plasma doped PR strip processes are viable candidates to meet the demanding clean requirements for USJ fabrication by plasma doping technology.
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