Abstract
In this paper, quasi-2D threshold voltage model of strained Si nMOS with polycrystalline SiGe gate is established based on the Guass Law and its I-V character model is also built based on the current density equation. The influence of relevant parameter on threshold voltage is analyzed by numerical analysis, and the validity of the model is verified by device simulator.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
