Abstract
AbstractIn this work two systems with total phase separation composed of alternated a‐Si/SiO2 and a‐Si/Si3N4 respectively along with silicon‐rich SiOxNy films were deposited by the PECVD technique and characterized by XANES, Raman, TEM and PL techniques. The multilayers were used to analyse the effects of phase separation in the XANES and Raman spectra as well as to determine the phase contrast in TEM images in order to elucidate upon the existence of phase separation in the silicon‐rich SiOxNy films and correlate it with the high photoluminescence intensity in the visible spectra region observed in the as deposited films. The results clearly indicate that the as deposited films present partial phase separation, which is crucial for the PL emission. The effect of high temperature annealing in the silicon‐rich SiOxNy films is also studied, Raman and XANES results show that heat treatments promote silicon aggregation and, in some cases, crystallization strongly influencing the PL emission. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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