Abstract
The effect of high temperature annealing and swift heavy ion irradiation (SHI) on the migration behaviour of xenon (Xe) implanted into glassy carbon (GC) have been investigated. GC substrates were implanted with 200 keV Xe ions to a fluence of 1 × 1016 cm−2 at room temperature. Some of the implanted samples were irradiated with 167 MeV Xe+26 ions to a fluence of 1 × 1014 cm−2 at room temperature. Both the as-implanted and implanted then irradiated were annealed in a vacuum at temperatures ranging from 1000 °C to 1500 °C in steps of 100 °C for 5 h. The RBS depth profiles showed that the implanted xenon migrates mostly into the bulk of the GC with the formation of a bimodal distribution. Microstructural changes in the glassy carbon substrate due to Xe bombardment and annealing were monitored using Raman spectroscopy. Raman results showed that swift heavy ion (SHI) irradiation caused some recrystallization in the amorphous region.
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