Abstract
Abstract We studied the effect of oxygen plasma treatment on the drain current and photoconductivity of the two dimensional few-layers MoS2 based field-effect transistors (FETs). It was observed that the oxygen plasma can reduce the photoconductivity of MoS2 channel along with variation in the current characteristics. This study shows the contribution of mild oxygen plasma to modulate the photoconductivity of the MoS2 FETs which can have potential in optoelectronic detectors and sensors applications.
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