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Abstract
The investigations carried out in this work indicated that the most influential parameter on the figure of merit of ZnO thin films deposited by the reactive evaporation method, is the content of oxygen in the preparation chamber. It was established that the best figure of merit defined in terms of both, the resistivity and the transmittance, is achieved for oxygen contents corresponding to a partial pressure around 0.3 mbar. This samples present simultaneously high transmission (>80%) and high conductivity (>103 Ω–1cm–1), which make them adequate for use as transparent electric contact in thin film solar cells. Special emphasis was devoted to the determination of the optical constants of ZnO thin films deposited. The refraction index n, absorption coefficient α and optical gap Eg were determined through spectral transmittance measurements and calculations, carried out taking into account the interference effect observed in the transmittance spectra. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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