Abstract
In order to investigate the passivation effects of hydrogen, high-resistivity indium doped cadmium manganese telluride (CMT:In) single crystals were annealed in H2 atmosphere. The results indicated the concentration of Mn element and the density of Te inclusions did not change after annealing. Both the resistivity and IR transmittance increased because of the reduction of the carrier concentration. The intensity of (D0,X) peak and (D0,h) peak decreases remarkably because of the passivation of the indium donor. The donor–acceptor pair peak (DAP) peak disappeared, which was due to the dissociation of [VCd − InCd] complexes and the passivation of the impurities by hydrogen. Moreover, Dcomplex peak consisted of two peaks. The intensities of D1 peak increased and D2 peak decreased because the passivation of hydrogen on the donor and dislocation, respectively. The best condition of passivation for H2 atmosphere annealing is 573 K for 30 h.
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