Abstract
The exponential rise in the density of silicon CMOS transistors has now reached a limit and threatening to end the microelectronics revolution. To tackle this difficulty, group III–V compound semiconductors due to their outstanding electron transport properties and high mobility are very actively being researched as channel materials for future highly scaled CMOS devices. In this paper, we have studied a ballistic nanoscale MOSFET using simulation approach by replacing silicon in the channel by III-V compounds. The channel materials considered are silicon (Si), Gallium arsenide (GaAs), Indium arsenide (InAs), Indium Phosphide (InP) and Indium Antimonide (InSb). The device metrics considered at the nanometer scale are subthreshold swing, Drain induced barrier lowering, on and off current, carrier injection velocity and switching speed. These channel materials have been studied using various dielectric constants. It has been observed that Indium Antimonide (InSb) has higher on current, higher transconductance, idealistic subthreshold swing, higher output conductance, higher carrier injection velocity and comparable voltage gain compared to Silicon, thus, making InSb as a possible candidate to be used as channel material in future nanoscale devices.
Highlights
Latest International technology roadmap for semiconductors (ITRS) suggests that MOSFETs will reach sub-10 nm dimensions by 2016 [1]
Since the channel length has become comparable to the mean free path of the carriers in the inversion layer, the MOSFETs are expected to approach the ballistic transport mechanism and the ballistic current is affected by the channel material, wafer orientation and by the channel direction in the transport plane
The main aim of this paper is to provide an insight by replacing Silicon in the channel by III-V compound semiconductors using different dielectric constants
Summary
Latest International technology roadmap for semiconductors (ITRS) suggests that MOSFETs will reach sub-10 nm dimensions by 2016 [1]. Since the channel length has become comparable to the mean free path of the carriers in the inversion layer, the MOSFETs are expected to approach the ballistic transport mechanism and the ballistic current is affected by the channel material, wafer orientation and by the channel direction in the transport plane. Ion is given in terms of technological and channel material parameters by the following expression [4]: where nv is the valley degeneracy, while mL and mW are the effective masses in the direction of the channel length and width, respectively. The expression (1) reveals that the maximum Ion can be obtained for the smallest transport masses and valley degeneracy. III-V compound semiconductors such as GaAs, InP, InAs, InSb etc., should be explored as alternative channel materials in the future nanoscale devices [5,6]
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