Abstract
The excitation intensity dependence of the 0.94, 1.0, 1.2, and 1.3 eV extrinsic emission in low-resistivity n-type GaAs crystals (n0 = 1017 to 2 × 1018 cm−3) is studied at 77 to 500 K. An analysis is given in which the functional non-linear intensity dependence of the extrinsic emission on the concentration of radiative and non-radiative centres, the free hole excess concentration (the free hole lifetime), and the rate of hole thermal release from radiative centres is considered. The main features for non-linear extrinsic emission observed in experiment (sublinear emission increase with excitation intensity, no luminescence saturation, a shift of emission quenching curves to higher temperatures as the excitation intensity is increased, a change from the sublinear to linear excitation dependence of emission intensity as the temperature is raised, and others) are satisfactorily explained by the accepted model of 0.94, 1.0, 1.2, and 1.3 eV radiative centres. The methods used could well be adopted for the analysis of non-linear luminescence in other semiconductors. [Russian Text Ignored].
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