Abstract
The excitation intensity dependence of the 0.94 and 1.0 eV extrinsic emission in n-type GaAs crystals (n0 ≈ 1017 cm−3) is studied at L ⪅ 1018 quanta/cm2 s and T = 77 K. Linear and sublinear 0.94 and 1.0 eV extrinsic emission is observed depending on the strength of the non-radiative electronic transitions in the radiative centres studied. The main features of the non-linear extrinsic emission (the sublinear emission increase with excitation intensity, a decrease in the internal quantum efficiency of the extrinsic emission and in the luminescence decay time as exciting power is increased) are satisfactorily explained by a model which takes into account an increase in the rate of non-radiative electronic transitions in 0.94 and 1.0 eV radiative centres as the exciting light considerably changes the hole occupancy of defects associated with the centres studied. [Russian Text Ignored.]
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
