Abstract
Nickel silicide formation on Si(1 1 0) and Si(1 0 0) substrate was investigated in this paper. It is confirmed that nickel monosilicide (NiSi) starts to form after 450 °C annealing for Si(1 0 0) substrate, but a higher annealing temperature is required for NiSi formation on Si(1 1 0) substrate, which is demonstrated by X-ray diffraction (XRD) and Raman scattering spectroscopy. The higher formation temperature of NiSi is attributed to the larger Ni 2Si grain size formed on Si(1 1 0) substrate. Ni silicided Schottky contacts on both Si(1 0 0) and Si(1 1 0) substrates were also fabricated for electrical characteristics evaluation. It clearly reveals that the rectifying characteristics of NiSi/n-Si(1 1 0) Schottky contacts is inferior to that of NiSi/n-Si(1 0 0) Schottky contacts, which is attributed to a lower Schottky barrier height and a rougher contact interface. The formation kinetics for nickel silicide on Si(1 1 0) substrate is also discussed in this paper.
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