Abstract
Nickel silicide formation on Si(110) substrate is investigated in this paper. Comparing with the samples fabricated on Si(100) substrate, it is revealed that a higher annealing temperature is required for NiSi formation on Si(110) substrate. X-ray diffraction and atomic force microscopy were employed for further material analysis. NiSi/Si(110) Schottky contacts were also fabricated for electrical characteristics evaluation. The formation kinetics for nickel silicidation on Si(110) substrates was also discussed in this paper.
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