Abstract
A series of SiGeSn alloy samples with various Si and Sn compositions and thicknesses were grown on Ge-buffered Si substrates. The growth was conducted by using low-cost commercially available silane and germane precursors in a standard industrial reduced pressure chemical vapor deposition reactor. Si and Sn compositional- and film thickness-dependent material and optical properties have been characterized using X-ray diffraction (XRD), Raman, photoluminescence (PL), and ellipsometry spectroscopies. Moreover, thermal stability in harsh growth environment, such as in subsequent III-V growth, was studied for future multi-junction solar cell applications. In situ rapid thermal annealing at 650°C was conducted to investigate the enhanced material quality and direct bandgap emission, which were confirmed by XRD, transmission electron microscopy, Raman, and PL measurements.
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