Abstract
Germanium-tin (GeSn) films with Sn compositions from 5% to 11% were grown on Ge-buffered Si using a reduced pressure chemical vapor deposition system with low-cost SnCl4 and GeH4 precursors. Material characterization showed that relaxed GeSn layers with thicknesses ranging from 400 nm to 1 μm were achieved. The strong photoluminescence (PL) intensity and the low defect density indicated very high material quality. In addition, temperature-dependent 10–300 K photoluminescence spectra showed that, due to strain relaxation of the material, the emission wavelength is longer than that of strained GeSn thin film samples (t < 200 nm) having the same Sn composition. At 300 K, the PL peak at 2520 nm was observed from the sample with a 1-μm-thick GeSn layer and 11% Sn composition.
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