Abstract
This article presents a variety of small size JFET structures of low pinch-off voltage in 500V high voltage platform. The low pinch-off voltage is achieved by adopting low concentration channel area and implanting the opposite conductivity type impurity into the deep channel region, and the JFET current is improved by increasing the concentration of the part of channel region. Finally, the low pinch-off voltage and high current JFET device is achieved without mask adding.
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