Abstract
Two basic characteristics of Anderson-type localized exciton in GaAs 1-xP x are illustrated in this study: (i) The localized state extends below the average band edge, and (ii) The wavefunction is very sensitive to its binding energy. Evidence of electronic excited state of localized exciton is also reported.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
