Abstract
Ion beam mixing has been extensively used in Metal/Silicon systems to produce the new phases. In the present study a Fe films was deposited by thermal evaporation onto p-type Si(111). The films were irradiated with 300 keV Xe+ ions at room temperature (RT) and subsequently annealed. The experimental results have shown that the Xe irradiation at RT leads to the formation only of the e-FeSi phase, and after thermal annealing the Fe layer is transformed to a mixture of e-FeSi, α-FeSi2 and β-FeSi2 phases. The β-FeSi2 having a direct band gap of 0.81 eV, is demonstrated.
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