Abstract
The study of nitrogen-vacancy (NV) centers in diamond are growing attractive in the application of quantum devices. Here, electrical control of NV charge state and defects induced by nitrogen ions implantation in diamond were investigated by transient photocapacitance (TPC) spectroscopy and photoluminescence (PL) spectroscopy. The experiments show that thresholds of 1.2 eV appeared in TPC spectra are probably due to the presence of excited defect energy levels related to vacancy or NV center. Alternatively, the 2.2 eV defect observed in the TPC spectrum is probably attributed to NV centers. The variation of TPC and PL spectra with different applied voltages suggests that bias voltages control the charge state of NV centers since their effect on the Fermi level shifting in the depletion region. Furthermore, the steady-state photocapacitance indicates that the 2.2 eV deep trap slows down the process of photocapacitance rise and fall, and these processes can be enhanced by a higher electrical field.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
