Abstract
Ion beam induced mixing during sputter depth profiling was studied for tantalum and lead marker layers in silicon with 5 keV neon by low energy ion scattering spectroscopy (LEIS). The diffusion approximation was used to calculate mixing efficiency values ( D/ JF d ) from decay length measurements. The mixing efficiency values are shown to be sensitive to the preferential sputtering which takes place during ion bombardment. TRIM simulations for Ta/Si are shown to agree with the experimentally determined value for preferential sputtering. Depth profiling at high temperature is shown to separate some of the interrelated mixing mechanisms of radiation enhanced diffusion (RED) and radiation induced segregation (RIS). For the Ta/Si system the mixing efficiency value is observed to remain constant regardless of the 5 keV inert gas ion beam used for depth profiling.
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