Abstract
The effects of growth interruption at the InGaAs/InP interface in metalorganic vapor phase epitaxial InGaAs/InP superlattice were examined with X-ray diffractometry and optical absorption spectroscopy. For superlattices grown with growth interruption in a phosphine ambient, both compressive strain and exciton absorption wavelength in the superlattice decrease with the interruption time. For superlattices grown with growth interruption in a hydrogen ambient, no significant change in compressive strain is observed. These results, combined with observations from a computer simulation of the X-ray rocking curve, indicate that, for our experimental configuration, the compositional graded InGaAs/InP interface extends widely into the subsequent InP and cannot be eliminated by short time growth interruption.
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