Abstract
The electrical and optical properties of advanced epitaxial structures, such as quantum wells and superlattices are strongly influenced by the quality of their interfaces. The GaInSb/InAs system is particularly important because of its promise for use in infrared detection in the 8–14 μm ranges. In this material system the two compounds do not share a common anion, and different bond types exist at the interface depending upon the growth parameters. We have looked at single quantum-well structures grown with solid source molecular beam epitaxy such that a distinct interface type would be found in each sample. X-ray rocking curves and full dynamical simulations were performed for each quantum well structure. Quantum wells with three types of interfaces were grown and analyzed; random interfaces, Sb-like interfaces, and As-like interfaces formed with a one monolayer group III deposition followed by a five second group V soak. With the exception of the interfaces, all three SQWs have nominally the same structure; 5000 Å of GaSb buffer layer grown upon a GaSb substrate, a 150 Å quantum well with 35 Å Ga 0.75In 0.25Sb barriers and a final GaSb cap layer of 50 Å thickness. Well-resolved Pendellösung fringes were found in all samples indicating high quality in the epitaxial layers and interfaces. The SQW with the As-like interfaces had the highest degree of quality as evidenced by persistence of the fringes.
Published Version
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