Abstract
InN nanorods (NRs) were grown on Si(111) substrate by plasma-assisted molecular beam epitaxy. The growth of InN NRs has been demonstrated using an electron-beam evaporated (~2 nm) Au layer prior to the initiation of growth. The structure and morphology of as deposited Au film, annealed at 600 °C, and InN NRs were investigated using X-ray photoelectron spectroscopy and scanning electron microscopy. Chemical characterization was performed with energy dispersive X-ray analysis. Single-crystalline wurtzite structure of InN NRs is verified by transmission electron microscopy. The formation process of NRs is investigated and a qualitative mechanism is proposed.
Highlights
Group III nitrides represent a material class with promising electronic and optical properties (Nakamura 1998)
The growth system used in this study was a PAMBE system (OMICRON) equipped with a radio frequency (RF) plasma source
The n-Si(111) substrates were chemically cleaned followed by dipping in 5 % HF to remove the surface oxide, and Au layer of *2 nm was deposited using electron beam evaporation
Summary
Group III nitrides represent a material class with promising electronic and optical properties (Nakamura 1998). Abstract InN nanorods (NRs) were grown on Si(111) substrate by plasma-assisted molecular beam epitaxy.
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