Abstract
Multi-chroic infrared light scattering tomography (MC-IR-LST) and transmission electron microscopy (TEM) were used to systematically investigate the inhomogeneous radial distribution of defects in as-grown and annealed Czochralski silicon (CZ-Si) crystals. A new defect morphology of dark stripes observed for the first time by the MC-IR-LST system in a special region in the as-grown CZ-Si crystal. After annealing the crystal at 1150°C for 16 h in an O2 atmosphere, dark stripes that became scattered in width and deep in contrast were clearly visible in an OSF-ring area. The location of these stripes in the as-grown crystal coincided with that in the annealed CZ-Si crystal, where many stacking faults and oxygen-precipitate-related polyhedral defects were revealed by TEM analysis. This means that the dark stripes were generated during crystal growth as original grown-in defects. Quantitative measurement of the inhomogeneous radial distribution of defects in the annealed crystal was made and the characteristics of the defects in different regions of the crystal were analytically discussed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have