Abstract
The morphology and size distribution of oxide precipitates in as-grown Czochralski (CZ) silicon crystals, with growth rates of about 1.1 mm/min, have been studied using infrared light scattering tomography (LST). The following results were obtained. (1) The morphology of oxide precipitates in as-grown CZ silicon is polyhedral. (2) The length of the side of the polyhedral precipitates is about 80 nm. According to their morphology and size distribution, it was concluded that they were formed in the high temperature range (≥1000 °C) during crystal growth.
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