Abstract
Transmission Electron Microscopy study of low temperature (200° C) grown InGaAs/GaAs(001) layers showed an unexpected Lomer dislocation network in the middle of the layer, which appears as a promising one for the effective structure relaxation without a high density of threading dislocations. However, the layer remained metastable, due to a lack in the relaxation degree. To take advantage of such a network, buffers layers were grown at 200° C by ALMBE, followed by a layer grown at 400°C or 500°C (in a dynamic and a stepped way), in order to reach the complete relaxation of the structure. Nevertheless, the Lomer network did not appear, substituted by a 60° dislocations one, placed in the region with the growth temperature change. The reasons of this change are discussed.
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