Abstract
MOSFETs with InGaAs in the channel show great promise for high-performance digital applications owing to enhanced electron mobility. In this letter, the analog performance is reported for the first time for an inversion-type enhancement-mode InGaAs-channel MOSFET. With the help of a device simulator, the device parameters for analog applications such as transconductance , transconductance-to-drain-current ratio , drain resistance , intrinsic gain, and unity-gain cutoff frequency are studied for such a device and compared with those for a similarly sized MOSFET. Our results show that InGaAs devices outperform their Si counterparts for analog applications.
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