Abstract
In this paper, we present the results of kinetic Monte Carlo study of the In/GaAs growth by droplet epitaxy in conditions of non-stationary vapor supersaturation. These conditions allow achievement of the independent control of size and surface density of nanostructures. The material redistribution is realized on the surface when indium deposition is interrupted and leads to a decrease in the critical thickness of droplet formation. An average droplet size increases with increase in interruption time whereas the surface density decreases. However, additional nucleation within the wetting layer can also be observed during the growth interruptions, which makes it possible to increase the surface density of droplets.
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