Abstract
Self-assembled InGaN quantum dots (QDs) were grown by metal–organic chemical vapourdeposition with growth interruption at low V/III ratio and low growth temperature onsapphire substrates. The effects of the interruption time on the morphological and opticalproperties of InGaN QDs were studied. The results show that the growth interruption canmodify the dimension and distribution of InGaN QDs, and cause the QD emission wavelengthto blue shift with increasing interruption time. A density of InGaN QDs of about4.5 × 1010 cm−2 with an average lateral size of 11.5 nm and an average height of 1.6 nm can be obtained byusing a growth interruption time of 60 s.
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