Abstract
Nanometer-scale InGaN self-assembled quantum dots (QDs) have been prepared by growth interruption during metalorganic chemical vapor deposition growth. With a 12 s growth interruption, we successfully formed InGaN QDs with a typical lateral size of 25 nm and an average height of 4.1 nm. The QD density was about 2×1010 cm−2. In contrast, much larger InGaN QDs were obtained without growth interruption. InGaN metal-semiconductor-metal photodiodes with and without QDs were also fabricated. It was found that the QD photodiode with lower dark current could operate in the normal incidence mode, and exhibit a stronger photoresponse.
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